| abstract |
Embodiments of the invention relate to a method of forming a semiconductor device including bonding a first device die to a second device die. The second device die is located over the first device die. A passive device is formed in a composite structure including a first device die and a second device die. The passive device includes a first terminal and a second terminal. A gap fill material is formed over the first device die, the gap fill material including portions on opposite sides of the second device die. The method also includes performing planarization to expose the second device die, wherein the remaining portion of the gap fill material forms an isolation region, forming first and second through vias through the isolation region to electrically connect to the first device die, and forming first and second electrical connections electrically connected to first and second ends of the passive device. Embodiments of the invention also provide another method of forming a semiconductor device and a package. |