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publicationDate 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109478497-A
titleOfInvention Utilize the preparation method of the silicon nitride film of Plasma-Atomic layer sedimentation
abstract It the present invention relates to the use of the preparation method of the high-purity silicon nitride film of Plasma-Atomic layer sedimentation.In more detail, in the present invention, the film efficiency improved and stepcoverage can be realized by implementing the plasma exciatiaon step of 2 steps, the silicon nitride film of high-purity can be provided under the film-forming temperature of low temperature with the deposition improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114929937-A
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priorityDate 2016-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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