abstract |
It the present invention relates to the use of the preparation method of the high-purity silicon nitride film of Plasma-Atomic layer sedimentation.In more detail, in the present invention, the film efficiency improved and stepcoverage can be realized by implementing the plasma exciatiaon step of 2 steps, the silicon nitride film of high-purity can be provided under the film-forming temperature of low temperature with the deposition improved. |