http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109270423-B

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2642
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 2018-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109270423-B
titleOfInvention Evaluation test method for low-temperature stability of SiC MOSFET device
abstract The invention belongs to the technical field of reliability test of silicon carbide semiconductor devices, and discloses a method for evaluating and testing low-temperature stability of a SiC MOSFET device, which comprises the following steps: (1) placing a sample subjected to ECR nitrogen plasma passivation treatment into a probe station, vacuumizing, cooling, (2) carrying out C-V curve measurement on the sample before electric field stress is applied, (3) carrying out C-V curve measurement on the sample after the electric field stress is applied, (4) calculating the drift amount of the C-V curve before and after the electric field stress is applied, and (5) evaluating the influence of an ECR nitrogen plasma passivation process on the stability of a device. According to the method, the influence of movable charges and fixed charges on the stability of the SiC MOSFET device is eliminated during low-temperature (80-300K) measurement, the independent passivation effect of a passivation process on the oxide layer trap and the interface trap can be explored, the number of the oxide layer trap charges and the number of the interface trap charges of a sample can be calculated, and the low-temperature stability of the SiC MOSFET device can be evaluated.
priorityDate 2018-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106684012-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3882391-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970

Total number of triples: 18.