http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109256475-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c020a3bfe9d62d22c33f10c20d4262b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-421 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2018-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_085bd206212333caf9311ba6bfd1a1ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_395f2eca7b2044ac0954441c58d4f020 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7499acab71301d9c2d236ae1177eb5b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9c213fee1aac14e87a710b30095082c |
| publicationDate | 2019-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109256475-A |
| titleOfInvention | A kind of perovskite light-emitting diode based on ultraviolet thermal annealing process and preparation method thereof |
| abstract | The invention discloses a perovskite light-emitting diode based on an ultraviolet thermal annealing process and a preparation method. The preparation method includes: cleaning and drying the substrate, and disposing an anode layer on the substrate; Ultraviolet ozone treatment; then prepare a hole transport layer on the anode layer of the substrate; spin-coat the mixed solution of perovskite material doped with ultraviolet curing agent on the hole transport layer, and then perform annealing treatment, while using ultraviolet light irradiating to obtain a light-emitting layer formed by a cross-linked perovskite thin film; preparing an electron transport layer and a cathode layer by vapor deposition on the light-emitting layer; and finally performing encapsulation. In the invention, the perovskite material is doped with an ultraviolet curing agent, and the light-emitting layer is prepared by irradiation with ultraviolet light, so that the formed perovskite film is dense and continuous, has good crystallinity, and has strong water and oxygen corrosion resistance, thereby improving the perovskite luminescence. diode brightness and efficiency, and improve device stability. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022016822-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113956517-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114203940-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109950412-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109950412-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111334295-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111500280-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113130703-A |
| priorityDate | 2018-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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