http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109233294-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2383-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-112 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-08 |
| filingDate | 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109233294-B |
| titleOfInvention | Organic silicon micro-porous ultralow dielectric film and preparation method thereof |
| abstract | The invention relates to the field of chemical industry, and discloses an organic silicon mesoporous and microporous ultralow dielectric film and a preparation method thereof, wherein the structural formula of a POSS organic silane precursor in the film is as follows: wherein n is 12, 16, 18, 20 or 22, and X is CH 3 Or CH 2 CH 3 (ii) a The preparation method comprises the following steps: dissolving a certain amount of POSS precursor in an organic solvent at room temperature, adding a proper amount of photoacid generator, uniformly stirring, and spraying on a substrate to form a film; after the organic solvent is completely volatilized, the organic solvent is placed under a light-emitting diode lamp for irradiation for a preset time, then the organic solvent is placed in N, N dimethylformamide to carry out ester exchange reaction with fluoroalkyl alcohol for 24-72h, and the organic silicon mesoporous ultralow dielectric film is obtained after washing and drying. Compared with the existing ultralow dielectric film, the obtained film has the advantages of lower dielectric constant (1.89), better dielectric stability in a humid environment, simple operation and high polymerization speed. |
| priorityDate | 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.