http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109148734-A

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filingDate 2017-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4048e46e6f83f00fff6eb4a5bb611b77
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publicationDate 2019-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109148734-A
titleOfInvention Thin film cross-linked between quantum dots and metal nanoparticles, preparation method and application thereof
abstract The invention discloses a film cross-linked between quantum dots and metal nanoparticles, and a preparation method and application thereof. The preparation method comprises the steps of: mixing quantum dots and metal nanoparticles in a solvent to obtain a mixed solution; A hybrid film is prepared; the hybrid film is cross-linked by the HHIC technology, so that the quantum dots and the metal nanoparticles are cross-linked to obtain a hybrid film in which the quantum dots and the metal nanoparticles are cross-linked. The invention utilizes HHIC technology to perform cross-linking treatment on the mixed film containing quantum dots and metal nanoparticles, without changing the properties of non-cross-linking groups and without generating by-products. In addition, compared with other methods, the HHIC method will not affect or less affect the properties of quantum dots, and the film cross-linked by the HHIC method is superior to the traditional heating cross-linked film in stability.
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