| abstract |
Embodiments of the invention relate to semiconductor devices and methods of forming the same, the methods comprising forming a transistor, forming the transistor comprising forming a gate dielectric over a semiconductor region, forming a gate electrode over the gate dielectric, and forming a source extending into the semiconductor region /drain region. The method also includes forming source/drain contact plugs over the source/drain regions electrically connected to the source/drain regions, and forming gate contact plugs over the gate electrodes in contact with the gate electrodes. Forming at least one of the gate electrode, forming the source/drain contact plug, and forming the gate contact plug includes forming a metal nitride barrier layer, and forming a metal-containing barrier layer over the metal nitride barrier layer in contact with the metal nitride barrier layer Floor. The metal-containing layer includes at least one of a cobalt layer and a metal silicide layer. Embodiments of the invention also relate to metal gates of transistors with reduced resistivity. |