| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2018-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2d2e7982c114dc313e957f439abccd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35dd8d4c5b1ad6b0cc60b820c87def93 |
| publicationDate |
2018-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108735598-A |
| titleOfInvention |
etching method |
| abstract |
The present invention provides a technique of anisotropic etching capable of satisfactorily forming a three-dimensional pattern. In one embodiment, a method for etching an object to be processed is provided. The object to be processed includes a supporting substrate and a processed layer, the processed layer is arranged on the main surface of the supporting substrate and includes a plurality of convex regions, and the plurality of convex regions respectively extend above the main surface, and the respective end faces of the plurality of convex regions It is exposed when viewed from the main face. The method includes: a first step of forming a film on each end face of a plurality of convex regions; a second step of anisotropically etching the film formed by the first step to selectively expose one or more end faces; and The end faces exposed in the second step are subjected to a third step of anisotropic etching for each atomic layer, wherein the layer to be processed contains silicon nitride and the film contains silicon oxide. |
| priorityDate |
2017-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |