| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2018-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d8477f12666127f7c0381c03eb1efa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57ec72b1af599a0b965df71d430fc766 |
| publicationDate |
2018-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108597983-A |
| titleOfInvention |
Selective Deposition of Silicon Nitride on Silicon Oxide Using Catalyst Control |
| abstract |
The invention utilizes a catalyst to control the selective deposition of silicon nitride on silicon oxide. Provided herein are methods and apparatus for selectively depositing silicon nitride on an exposed silicon oxide surface of a substrate relative to an exposed silicon surface. The technique involves providing trimethylaluminum to the substrate to form aluminum-containing moieties on the exposed silicon oxide surface, and using alternating pulses of aminosilane and hydrazine to selectively deposit silicon nitride on the surface by thermal atomic layer deposition, relative to Exposed Silicon Surfaces The thermal atomic layer deposition on exposed silicon oxide surfaces is catalyzed by aluminum-containing moieties. Another technique involves providing a transition metal-containing gas to the exposed silicon oxide surface to form a transition metal-containing moiety that acts as a catalyst during thermal atomic layer deposition of silicon nitride using alternating pulses of aminosilane and hydrazine. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113423864-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112038228-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112038228-B |
| priorityDate |
2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |