http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108573866-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2018-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108573866-B |
| titleOfInvention | Oxide film removal method and device, and contact portion forming method and system |
| abstract | The invention provides an oxide film removal method and device, and a contact portion forming method and system. This oxide film removal method suppresses CD loss when removing the silicon-containing oxide film formed in the silicon portion at the bottom of the pattern. The oxide film removal method is for removing a silicon-containing oxide film from a substrate to be processed having an insulating film formed with a predetermined pattern and a silicon-containing oxide film having a silicon portion formed at the bottom of the pattern, the oxide film removal method comprising: The following steps: remove the silicon-containing oxide film formed on the bottom of the pattern by ionic anisotropic plasma etching with carbon-based gas plasma; remove the silicon-containing oxide film after the anisotropic plasma etching by chemical etching. a remaining portion of the silicon-containing oxide film; and removing residue remaining after chemical etching. |
| priorityDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.