http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107946311-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 |
| filingDate | 2017-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107946311-B |
| titleOfInvention | Method for controlling channel critical dimensions in 3D NAND flash memory structures |
| abstract | The invention provides a method for controlling the critical dimension of the channel of the 3D NAND flash memory structure during the channel etching process of the 3D NAND flash memory structure. By adding a wet cleaning process step before the channel etching process, the lining can be effectively removed. The harmful oxide insulating material formed on the backside of the substrate; since the harmful insulating material formed on the backside of the substrate is removed, it is conducive to the accumulation of more negative charges on the electrodes on one side of the substrate, thereby enhancing the positive and negative effects between the positive and negative electrodes of the plasma source. , the attraction of negative charges, so as to ensure the vertical downward movement of the plasma source, so that the plasma etching can be as anisotropic as possible to etch down perpendicular to the substrate surface, avoiding useless or even harmful etching in other directions; based on plasma etching The enhancement of etching anisotropic etching makes it easier to control the critical dimension (CD) of the channel, thereby effectively ensuring the accuracy of the critical dimension of the channel, thereby improving the overall performance of the 3D NAND flash memory. |
| priorityDate | 2017-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.