http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107895700-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2017-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b09d00efe2d341d03dd39238df37c6 |
| publicationDate | 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107895700-A |
| titleOfInvention | The compatible plasma source of oxygen |
| abstract | Disclose a kind of compatible plasma source of oxygen.The processing chamber housing of description can include chamber shell, and the chamber shell defines the interior zone of semiconductor processing chamber at least in part.Chamber shell can include lid.Chamber can include being configured to the pedestal in the processing region inner support substrate of chamber.Chamber can also include the first spray head with supply coupling.First spray head can be positioned in the semiconductor processing chamber between lid and processing region.Chamber may also comprise the first dielectric panel, and first dielectric panel is positioned in the semiconductor processing chamber between the first spray head and processing region.Chamber can include the second spray head, and second spray head and electrical grounding are coupled and be positioned in the semiconductor processing chamber between the first dielectric panel and processing region.Chamber may further include the second dielectric panel, and second dielectric panel is positioned in the semiconductor processing chamber between the first dielectric panel and the second spray head. |
| priorityDate | 2016-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.