| abstract |
One embodiment is a method comprising forming a first passive device in a first wafer, forming a first dielectric layer over a first side of the first wafer, forming multiple layers in the first dielectric layer. a first bond pad, planarize the first dielectric layer and the plurality of first bond pads so that the top surfaces of the first dielectric layer and the plurality of first bond pads are flush with each other, place the first device die Hybrid bonding is made to the first dielectric layer and at least some of the plurality of first bond pads, and the first device die is encapsulated in the first encapsulant. Embodiments of the present invention also relate to semiconductor packages and methods of forming the same. |