| abstract |
A method for forming a semiconductor device, comprising: providing a semiconductor substrate with fins on the surface of the semiconductor substrate; forming an isolation fluid layer covering the fins on the semiconductor substrate; performing a first step on the isolation fluid layer Annealing to make the isolation fluid layer form an isolation film; after the first annealing, a first well region and a second well region are formed in the fin and the semiconductor substrate, and the second well region is located on both sides of the first well region and is connected with the first well region. The well regions are adjacent, the first well region has first trap ions, the second well region has second trap ions, and the conductivity type of the second trap ions is opposite to that of the first trap ions. The method for forming a semiconductor device can improve the electrical performance of the semiconductor device. |