http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107611125-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2014-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107611125-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | The present invention provides a semiconductor device and a manufacturing method thereof. A semiconductor device includes a substrate having an active region defined by a device isolation layer. A gate electrode extends over the active region in a first direction, and a plurality of interconnects extend over the word line in a second direction perpendicular to the first direction. A contact pad is disposed between and spaced apart from the gate electrode and the plurality of interconnects, the contact pad extending in the first direction to overlap the plurality of interconnects and the active when viewed in plan Area. The lower contact plugs electrically connect the contact pads to the active area. The upper contact plug electrically connects the contact pad to one of the plurality of interconnects. |
| priorityDate | 2013-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 88.