http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107452617-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2017-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107452617-B |
| titleOfInvention | Method for filling recess |
| abstract | A method for filling a recess in which a nitride film can be filled into a fine recess without generating voids or seams. Repeating a film formation source gas adsorption step and a nitridation step to form a nitride film in the recess and fill the recess, the film formation source gas adsorption step: adsorbing a film formation source gas containing a constituent element of a nitride film to be formed on a target substrate having a recess formed on a surface thereof; the nitriding step: the adsorbed film forming source gas is nitrided by a nitriding species generated by activating a nitriding gas, and at this time, at least a part of a period of forming a nitride film is set as a bottom-up growth period, and during the bottom-up growth period, a polymer material capable of adsorbing on the surface of the substrate to be processed is supplied in a vapor phase and adsorbed on the upper portion of the recessed portion, whereby adsorption of the film forming source gas is inhibited, and the nitride film is grown from the bottom portion of the recessed portion. |
| priorityDate | 2016-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.