http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107195616-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate | 2017-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107195616-B |
| titleOfInvention | Semiconductor device including metal adhesion and barrier structures and method of forming the same |
| abstract | Semiconductor devices including metal adhesion and barrier structures and methods of forming the same are disclosed. Embodiments of a semiconductor device include a metal structure electrically connected to a semiconductor body. The metal adhesion and barrier structure is located between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten, and a layer comprising titanium, tungsten, and nitrogen over the layer comprising titanium and tungsten. |
| priorityDate | 2016-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.