http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107039430-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2016-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107039430-B |
| titleOfInvention | Semiconductor structure and method of making the same |
| abstract | Embodiments of the present invention provide semiconductor structures and methods of fabricating the same. The semiconductor structure includes a substrate, a first gate structure, a first spacer, a source-drain structure, a first dielectric layer, a conductor and a protective layer. The first gate structure exists on the substrate. The first spacers are present on the sidewalls of the first gate structure. The source-drain structure is adjacent to the first spacer. A first dielectric layer is present on the first gate structure and has openings therein, wherein the source and drain structures are exposed through the openings. A conductor is electrically connected to the source-drain structure, wherein the conductor has an upper portion in the opening of the first dielectric layer and a lower portion between the upper portion and the source-drain structure. A protective layer exists between the lower portion and the first spacer and between the upper portion and the source-drain structure. |
| priorityDate | 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.