| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2017-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bb182cc004707b432a0142d1741bedd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10f63058ccea6d42686beb6b191c2eaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e11efd3f9d269af1708c7167ebe04190
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db775e72b407848f950800828dae16d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e7755fb42c18e7c747d9eec2efae57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c05af2a550fa3780b8aa7366cc160e49 |
| publicationDate |
2017-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-107039263-A |
| titleOfInvention |
method of plasma etching |
| abstract |
The invention discloses a plasma etching method and a method for manufacturing a semiconductor device including the method. The method of plasma etching includes: loading a substrate including an etching object onto a first electrode in a chamber including first and second electrodes arranged to face each other; and etching the etching object. Etching the object to be etched includes applying a plurality of RF energies to one of the first electrode and the second electrode. The plurality of RF energies may include first RF energy having a first frequency ranging from about 40 MHz to about 300 MHz, second RF energy having a second frequency ranging from about 100 kHz to about 10 MHz, and Third RF energy having a third frequency in a range from about 10 kHz to about 5 MHz. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110970288-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11658039-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110970288-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112424904-A |
| priorityDate |
2016-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |