http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106783582-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78672 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2016-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106783582-B |
| titleOfInvention | Polycrystalline silicon thin film processing method, thin film transistor, array substrate and display panel |
| abstract | The invention provides a processing method of a polycrystalline silicon thin film, a thin film transistor, an array substrate and a display panel, wherein the method comprises the following steps: forming a polycrystalline silicon film with a rough surface on a substrate; forming a protective layer on the surface of the polycrystalline silicon film; and performing surfacing treatment on the polycrystalline silicon film with the rough surface on which the protective layer is formed, thereby forming the polycrystalline silicon film with a smooth surface. By the method, the polycrystalline silicon film with a smooth surface can be formed, so that the corresponding array substrate and the corresponding display panel avoid the point discharge phenomenon caused by the rough polycrystalline silicon film, generate larger leakage current and improve the product quality. |
| priorityDate | 2016-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.