http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106663624-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2015-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106663624-B |
| titleOfInvention | Chemicals for TSV/MEMS/Power Device Etching |
| abstract | Alternative chemistries for cC4F8 passivation gases in bosch etch processes and processes using these chemistries are disclosed. These chemicals have the formula CxHyFz , where 1≤x <7, 1≤y≤13 , and 1≤z≤13. These alternative chemistries reduce the RIE hysteresis associated with deep silicon hole etching. |
| priorityDate | 2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 152.