http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106346619-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1033 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B26F3-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-53 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-359 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28D5-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28D5-0011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B28D5-00 |
| filingDate | 2016-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106346619-B |
| titleOfInvention | Method of producing wafers |
| abstract | Provided is a method for producing wafers that can efficiently produce wafers from ingots. The method for producing a wafer for producing a wafer from a hexagonal single crystal ingot includes a step of forming a modified layer, the c-axis is inclined at an off-angle with respect to the vertical line of the front surface of the ingot, and the off-angle is formed between the front surface and the c-plane at a direction perpendicular to the direction in which the off-angle is formed. A linear modified layer is formed by relatively moving the condensing point of the laser beam in the direction. In the reforming layer forming step, before the spot area of the laser beam completely overlaps the upper surface of the ingot, the condensing point of the laser beam is positioned so as to draw a parabola from a position that does not reach a depth corresponding to the thickness of the wafer, and The point at which the spot area completely overlaps the upper surface positions the spot at a depth corresponding to the thickness of the wafer. |
| priorityDate | 2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013161820-A |
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID455502157 |
Total number of triples: 27.