| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ccf5b9bc19312664d96f9082d4c635b6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 |
| filingDate |
2016-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1320236d6303968c72e5a24fbda4dea8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ad8d114ef894cd02963d5c71cf9c191
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d68466433008293ff1571617c78c2b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33e466af23957e4951508e60b4093ba9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_610d7e76f0040a424249e5aeb961219b |
| publicationDate |
2016-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106206596-A |
| titleOfInvention |
Method for manufacturing split-gate flash memory device |
| abstract |
The invention provides a method for manufacturing a split-gate flash memory device. By adding at least one gas among hydrogen, nitrogen and fluorine-based gases in the oxygen plasma ashing process after etching the silicon nitride layer of the floating gate, the floating The photoresist layer used for etching the gate silicon nitride layer will simultaneously remove the polymer residue attached to the sidewall of the floating gate silicon nitride layer, thereby eliminating the impact of the polymer residue on the etching of the subsequent floating gate polysilicon layer. The adverse effects of the etching process can be obtained to obtain the height of the tip of the floating gate that meets the requirements, thereby avoiding the formation of the reverse tip of the polysilicon layer of the word line, and improving the programming crosstalk failure problem caused by the reverse tunneling phenomenon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111799163-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111128705-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110391243-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111128705-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107579068-A |
| priorityDate |
2016-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |