http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106057808-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate | 2016-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106057808-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | A semiconductor device includes: a substrate provided with an active pattern; a gate electrode extending across the active pattern; source/drain regions respectively disposed in upper portions of the active patterns between the gate electrodes; and a first contact and a second contact disposed between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are arranged with their contact centerlines spaced from the respective gate centerlines by first and second distances. The first distance is different from the second distance. |
| priorityDate | 2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.