http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105990443-B

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
filingDate 2015-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105990443-B
titleOfInvention Semiconductor device and forming method thereof
abstract The present invention provides a kind of semiconductor device and forming method thereof.Template layer is formed on substrate, has recess portion in the template layer.Multiple nano wires are formed in the recess portion.Gate stack is formed on substrate, which surrounds multiple nano wires.Grid control can be improved using multiple nano wires, and simultaneously maintains high on state current I ON 。
priorityDate 2015-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23969
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID13831
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11774
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577416
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID66198
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15051
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID416000308
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID537047
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419530450
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID71547
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5182128
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11656
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415027752
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518858
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID76919
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548998
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419532065
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415749029
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518864
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419528482

Total number of triples: 54.