| abstract |
The present invention describes devices and methods of forming such devices having materials that are semi-metallic when in bulk but semi-conductive in the device. Exemplary structures include a substrate, a first source/drain contact region, a channel structure, a gate dielectric, a gate electrode, and a second source/drain contact region. The substrate has an upper surface. The channel structure is connected to and overlying the first source/drain contact region, and the channel structure is over the upper surface of the substrate. The channel structure has sidewalls extending over the first source/drain contact regions. The channel structure includes a bismuth-containing semiconductor material. The gate dielectric is along the sidewalls of the channel structure. The gate electrode is along the gate dielectric. The second source/drain contact region is connected to and over the channel structure. The present invention relates to devices having semiconductor materials that are bulk semi-metals and methods of forming the same. |