| abstract |
Described herein are devices comprising a plurality of silicon-containing layers selected from silicon oxide and silicon nitride layers or films. Methods of forming devices such as to be used as 3D vertical NAND flash memory stacks are also described herein. In a specific aspect of the device, the silicon oxide layer has slight compressive stress and good thermal stability. In this or other aspects of the device, the silicon nitride layer has a slight tensile stress and a stress change of less than 300 MPa after heat treatment up to about 800°C. In this or other aspects of the device, the silicon nitride layer etches much faster than the silicon oxide layer in thermal H3PO4, indicating good etch selectivity. |