| abstract |
The present invention relates to a method for manufacturing a semiconductor device and a substrate processing apparatus. The controllability, film quality, etc. of the composition of the nitride film formed on the substrate can be improved. There are the following steps: a step of supplying a first raw material and a first nitriding agent to a substrate having an oxygen-containing film formed on the surface, and forming an initial film on the oxygen-containing film; and plasma nitriding the initial film to thereby A step of reforming the initial film into a first nitride film; and a step of supplying a second raw material and a second nitriding agent to the substrate to form a second nitride film on the first nitride film. |