http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105734531-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2012-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105734531-B |
| titleOfInvention | Manufacturing method, Method of processing a substrate and the substrate processing device of semiconductor devices |
| abstract | This application involves the manufacturing method of semiconductor devices, Method of processing a substrate and substrate processing device, formed with low-k, high elching resistant, high resistant to leakage characteristic film.Include the process by carrying out forming the film comprising regulation element, oxygen, carbon and nitrogen on substrate by stipulated number recycles as follows, which includes following process：To the process of unstrpped gas of the substrate supply comprising regulation element and halogen, quantity be made of to substrate supply carbon, nitrogen and hydrogen this 3 kinds of elements and the carbon atom in 1 molecule than nitrogen-atoms quantity more than the first reaction gas process, process to substrate supply nitriding gas as the second reaction gas, and the process to substrate supply oxidizing gas as third reaction gas. |
| priorityDate | 2011-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 116.