http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105679832-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-471 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2015-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105679832-B |
| titleOfInvention | Thin film transistor substrate and method of manufacturing the same |
| abstract | The present disclosure provides a thin film transistor substrate and a method of manufacturing the same. A thin film transistor substrate includes: a gate electrode disposed on the base substrate; an active pattern overlapping the gate electrode; a source metal pattern including both a source electrode and a drain electrode spaced apart from the source electrode disposed on the active pattern; a buffer layer disposed on the source metal pattern and contacting the active pattern; a first passivation layer disposed on the buffer layer; and a second passivation layer disposed on the first passivation layer. The density of hydrogen in the buffer layer is greater than the density of hydrogen in the first passivation layer and less than the density of hydrogen in the second passivation layer. |
| priorityDate | 2014-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.