http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105374676-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32926 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 2015-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105374676-B |
| titleOfInvention | Formation of low-k dielectric films |
| abstract | The present invention generally relates to the formation of low-k dielectric films and describes methods and apparatus for making porous low-k dielectric films. In some implementations, the method includes exposing a precursor film comprising a porogen within a matrix to a plasma generated from a weak oxidant. The plasma may also contain reducing agent species. In some implementations, the plasma is a downstream plasma. Implementation of the method involves selectively removing regions of co-existing isolated organic porogens within the silicon-organic matrix by exposing the plasma, while retaining organic groups bonded to the backbone of the silicon matrix. The method also results in low damage to the dielectric film. In some implementations, the plasma is exposed after exposure to ultraviolet (UV) radiation. |
| priorityDate | 2014-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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