http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105374674-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2015-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105374674-B |
| titleOfInvention | Etching method of multilayer film |
| abstract | The present invention relates to methods for etching multilayer films. [Problem] It is required to suppress the deterioration of the verticality of the space formed in the multilayer film in a part of the object to be processed. [Solution] The method of etching a multilayer film includes a step of generating plasma in a processing chamber of a plasma processing apparatus to etch a multilayer film. In this step, a gas containing hydrogen, hydrogen bromide gas, The first processing gas of fluorine-containing gas, hydrocarbon gas, hydrofluorocarbon gas and perfluorocarbon gas is further supplied with the second processing gas containing hydrocarbon gas and perfluorocarbon gas from one of the first supply part and the second supply part. process gas, and excite the first process gas and the second process gas. |
| priorityDate | 2014-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.