abstract |
The invention discloses a semiconductor device. According to the present invention, the semiconductor device includes: an interlayer insulation film which is formed on a semiconductor substrate; an utmost upper layer wiring which is composed of copper and is formed on the interlayer insulation film; a passivating film which is formed on the utmost upper layer wiring and is provided with a bonding pad opening which is optionally exposed so as to make the surface of the utmost upper layer wiring as an electrod bonding pad; and a bonding wire which is made of copper and is directly bonded to the electrod bonding pad. |