| abstract |
Disclosed is a through electrode substrate comprising a conduction part extended from the obverse surface of the substrate to the reverse surface of the substrate, the conduction part having improved electric characteristics. Also disclosed is a semiconductor device using the through electrode substrate. A through electrode substrate (100) comprises a substrate (102) having a through-hole (104) extended from the obverse surface of the substrate to the reverse surface of the substrate, and a conduction part (106) comprising a metal material filled into the through-hole (104). The conduction part (106) comprises at least a metal material having an area weighed average grain diameter of not less than 13 [mu]m. Further, the conduction part (106) comprises a metal material having a grain diameter of not less than 29 [mu]m. One end of the conduction part comprises a metal material having an area weighed average grain diameter of less than 13 [mu]m, and the other end of the conduction part comprises at least a metal material having an area weighed average grain diameter of no less than 13[mu]m. |