http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104465660-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 |
| filingDate | 2014-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104465660-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | The present invention relates to a semiconductor device and a method of manufacturing the same. Changes in the contact area between the contact plugs are suppressed to suppress fluctuations in contact resistance. In the three third interlayer insulating films, contact holes are formed in self-alignment so as to extend through a portion thereof between the two wiring portions and a portion thereof between the two gate wirings, and reach The first polysilicon plug. In the contact hole, a second polysilicon plug is formed so as to be in contact with the first polysilicon plug. |
| priorityDate | 2013-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.