http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104465486-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104465486-B |
| titleOfInvention | The forming method of semiconductor devices |
| abstract | A kind of forming method of semiconductor devices, including：Semiconductor substrate is provided, there is isolation structure in the Semiconductor substrate, and the semiconductor substrate surface between adjacent isolation structures has grid structure；Stability doping is carried out to the isolation structure so that the resistance to corrosion enhancing of isolation structure；Groove is formed in the Semiconductor substrate of the grid structure both sides；After being doped to the isolation structure, cleaning treatment is carried out to the groove；Form the stressor layers of the full groove of filling.Invention increases the stability of isolation structure, improve the anti-etching ability of isolation structure material, isolation structure is avoided to be etched by semiconductor device fabrication process, improve the reliability of isolation structure, and then improve the reliability of semiconductor devices, avoid that breakdown or leaky occurs, optimize the electric property of semiconductor devices. |
| priorityDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.