http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104392919-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02054 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate | 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104392919-B |
| titleOfInvention | The processing method of the surface of silicon of nmos device and the preparation method of nmos device |
| abstract | Present invention is disclosed a kind of processing method of surface of silicon of nmos device and the preparation method of nmos device, groove surfaces are aoxidized through cleaning after forming groove on a silicon substrate, then by groove oxide removal, to expose surface of silicon.Then carborundum is grown on the silicon substrate after by above-mentioned processing step, for forming source electrode and drain electrode, to make nmos device.The silicon substrate of the making of the present invention has the advantages of surface cleanness is high, roughness is low, and the nmos device made using the silicon substrate of the present invention has preferable electric property. |
| priorityDate | 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.