http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104350584-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104350584-B |
| titleOfInvention | Substrate processing apparatus and substrate processing method |
| abstract | The present invention is used to appropriately remove reaction products generated when etching a film to be etched. The apparatus of the present invention is used for processing reaction products deposited by etching a layer to be etched contained in a substrate to be processed. The apparatus includes a processing container, a spacer, a plasma source, a mounting table, a first processing gas supply unit, and a second processing gas supply unit. The processing container divides the space. The partition is arranged in the processing container, and divides the space into a plasma generation space and a substrate processing space, and is used for suppressing the transmission of ions and vacuum ultraviolet light. The plasma source is used to generate plasma in the plasma generation space. The mounting table is arranged in the substrate processing space and is used for mounting the substrate to be processed. The first processing gas supply unit supplies a first processing gas that is dissociated by the plasma to generate radicals to the plasma generation space. The second processing gas supply unit supplies a second processing gas that reacts with the reaction product without being exposed to plasma to the substrate processing space. |
| priorityDate | 2012-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.