http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104170060-B

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81193
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05025
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0006
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
filingDate 2011-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104170060-B
titleOfInvention Dorsal part bulk silicon MEMS
abstract A kind of IC-components, including single semiconductor substrate;Form the device layer in the positive side of the single semiconductor substrate;Form the redistribution layer on the dorsal part of the single semiconductor substrate;The silicon reach through hole (TSV) in single semiconductor substrate is formed, it is electrically coupled to the device layer and the redistribution layer;The logical memory interface (LMI) on the dorsal part of single semiconductor substrate is formed, it is electrically coupled to the redistribution layer;With MEMS of the formation on the dorsal part of single semiconductor substrate, it is electrically coupled to the redistribution layer.
priorityDate 2011-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID150906
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159434
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426031689
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453010884
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159433
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452441329
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID4389803
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450964499
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3468413
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449693299
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166601
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449573737
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID73975
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452894838
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524988
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453621816
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556964
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID431910054
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID158731258
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522147
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID91500
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID154084926
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID8263
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID4227894
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452908191
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16217088
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545753

Total number of triples: 60.