http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104106127-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104106127-B |
| titleOfInvention | Manufacturing method of semiconductor manufacturing device and semiconductor manufacturing device |
| abstract | The present invention provides a method of manufacturing a semiconductor manufacturing device for etching a multilayer film obtained by alternately laminating first films and second films having different relative permittivity on a substrate, and forming a multilayer film on the multilayer film. Holes of a predetermined shape, etc., the manufacturing method of the above-mentioned semiconductor manufacturing device includes: using a gas containing at least any one of a bromine-containing gas, a chlorine-containing gas, and an iodine-containing gas, and a CF-based gas at a first flow rate to form a multilayer film. A first step of etching to a first depth; after the first step, using a gas containing at least any one of a bromine-containing gas, a chlorine-containing gas, and an iodine-containing gas and a CF-based gas at a second flow rate different from the first flow rate gas, the second step of etching the multilayer film to a second depth different from the above-mentioned first depth; and the third step of performing overetching until holes etc. reach the base layer of the multilayer film after the second step. |
| priorityDate | 2012-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.