http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104037264-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2014-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104037264-B |
| titleOfInvention | A kind of method that PECVD deposits low surface recombination solar cell dielectric layer |
| abstract | The invention discloses a kind of method that PECVD deposits low surface recombination solar cell dielectric layer, silicon chip by cleaning and texturing, diffusion and etching is put into PECVD chambers, reacting gas, plus the dielectric layer film that radio-frequency starting low temperature depositing a layer thickness is 1 ~ 30nm are passed through after vacuumizing；Vacuumize again and raise depositing temperature, after being passed through reacting gas after temperature stabilization, plus the dielectric layer film that radio-frequency starting high temperature deposition a layer thickness is 50 ~ 100nm.The present invention uses substep alternating temperature depositional mode, first carries out low temperature depositing and uses relatively low radio-frequency power supply power simultaneously, bombardment of the reduction plasma to silicon chip surface is acted on；High temperature deposition is carried out again; higher excitation source power is used simultaneously; increase hydrogen atom generation and its dielectric film and the interface of silicon diffusion; now due to the protection of low temperature depositing layer; high energy-density plasma can't act directly on silicon chip surface; so as to the enhancing that the reduction and hydrogen of realizing the silicon slice surface defects density of states are passivated, Carrier recombination is reduced, solar cell electrical property is lifted. |
| priorityDate | 2014-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.