| abstract |
The invention discloses a vertical gallium nitride field-effect transistors and corresponding manufacturing methods. The vertical gallium nitride transisto includes a top surface, a bottom surface, and a semiconductor structure containing a gallium nitride layer, wherein the semiconductor structure including a first semiconductor layer of a first conductivity-type having a top surface, a bottom surface, and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the bottom surface and the sidewalls of the first semiconductor layer, and a semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the semiconductor layer separating the first and second semiconductor layers from each other. |