http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103915331-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103915331-B |
| titleOfInvention | Ion injection method |
| abstract | Method the invention provides ion implanted regions are formed in the semiconductor device.The method includes：A () provides the semiconductor substrate in the region with multiple pending ion implantings；B () forms a photoetching agent pattern on a semiconductor substrate, wherein the photoetching agent pattern is formed by the chemical amplification photo etching glue composition comprising the matrix polymer with acid labile group, photo-acid agent and solvent；C () coats descum composition on photoetching agent pattern, wherein the descum composition is included：Matrix polymer；Raw acid agent, it is selected from thermally generated acid agent, photo-acid agent and combinations thereof, and a kind of solvent；D () is such that the semiconductor substrate of the coating is exposed to some conditions, acid is produced from the raw acid agent with descum composition；E () makes descum composition and scum silica frost of the semiconductor substrate contacts purificant of coating to be remained from base material removal；And (f) uses the photoetching agent pattern as injecting mask, the multiple regions to the semiconductor substrate are injected.The method is particularly well-suited to the manufacture of semiconductor devices. |
| priorityDate | 2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 164.