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filingDate 2013-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103715211-B
titleOfInvention Inject isolating device and forming method thereof
abstract Inject isolating device and method thereof. A kind of device comprises that Semiconductor substrate and the end face from Semiconductor substrate extend to Semiconductor substrate and around the injection area of isolation of active region. Gate-dielectric is arranged on the active region top of Semiconductor substrate and extends to and injects area of isolation top. Gate electrode is arranged on gate-dielectric top, and two ends cover hard mask and injecting above area of isolation between gate-dielectric and gate electrode. Two ends cover hard mask and comprise the alloy identical with being injected into alloy in active region.
priorityDate 2012-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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