http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103597583-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2012-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103597583-B |
| titleOfInvention | The cleaning method of semiconductor manufacturing apparatus member, the rinser of semiconductor manufacturing apparatus member and epitaxially growing equipment |
| abstract | In the rinser (100) possessing gas introduction tube (104) and gas outlet pipe (105), configuration is attached with and uses formula Al x In y Ga 1-x-y Wherein, x, y are 0��x < 1,0��y < 1,0��x+y < 1 to N(. ) semiconductor manufacturing apparatus member (101) of nitride-based semiconductor that represents. After becoming decompression state in device, import halogen-containing gas from gas introduction tube (104), and the pressure in device is become more than 10kPa and below 90kPa. Afterwards, in device, keep halogen-containing gas, thus removing the nitride-based semiconductor being attached on semiconductor manufacturing apparatus member (101). |
| priorityDate | 2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.