http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103311198-B

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filingDate 2012-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103311198-B
titleOfInvention Wear silicon through hole and preparation method thereof
abstract The invention discloses one and wear silicon through hole, it comprises an insulating barrier, and continuous print lining is on a sidewall of a recessed via structure; One barrier layer, continuous print is covered with this insulating barrier; One discontinuous crystal seed layer, it has one first position, is positioned at the one end open place of this recessed guide hole structure; One discontinuous dielectric layer, it partly covers this sidewall of this recessed via structure; And a conductive layer, insert this recessed via structure.
priorityDate 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.