http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103060778-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
filingDate 2013-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0b2340f78330d3723f29efa5dcaca2d
publicationDate 2015-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103060778-B
titleOfInvention Flat plate type PECVD (Plasma Enhanced Chemical Vapor Deposition) device
abstract The invention discloses a flat plate type PECVD (Plasma Enhanced Chemical Vapor Deposition) device which comprises a vacuum chamber body for holding a workpiece and a plasma transmitter arranged above the vacuum chamber body, wherein the plasma transmitter comprises a transmitting box which is fixed together with the vacuum chamber body and a radio frequency impedance adapter arranged above the transmitting box; a medium window is linked below the transmitting box; an antenna body which is linked with the radio frequency impedance adapter is fixedly arranged above the transmitting box; the antenna body comprises an antenna arranged inside the transmitting box and a connection end which is used for linking the antenna and the radio frequency impedance adapter; a radio frequency power supply is externally connected with the radio frequency impedance adapter; a process gas inlet tube is fixedly arranged on the vacuum chamber body; and an installing groove corresponding to the transmitting box is arranged above the vacuum chamber body. The flat plate type PEVCD device is provided with a stable and safe radio frequency power supply with moderate power; and due to a copper antenna for controlling the plasma and the unique process gas inlet mode, workpieces such as silicon nitride films with excellent properties of uniformity, compactness and pollution freeness can be deposited.
priorityDate 2013-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 28.