http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102870198-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102870198-B |
| titleOfInvention | Pole low silicon loss high dose implantation is peeled off |
| abstract | The present invention is provided to peeling off photoresist from workpiece surface and removing the improved method that related residue is ion implanted.According to various embodiments, plasma is produced using element hydrogen, fluoro-gas and protective agent gas.Reacted with high dose implantation resist through plasma-activated gas, so as to remove both crust and block resist layer, and protect the expose portion of the workpiece surface simultaneously.In the case of low silicon loss, the workpiece surface is substantially free from residue. |
| priorityDate | 2009-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.