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filingDate 2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102856381-B
titleOfInvention Semiconductor device, the method manufacturing semiconductor device and electronic installation
abstract The invention provides a kind of semiconductor device, the method manufacturing semiconductor device and electronic installation.The upper end of gate electrode is positioned at the lower face of Semiconductor substrate.Insulating barrier is formed on gate electrode and is positioned in the Semiconductor substrate around it.Insulating barrier has the first dielectric film and low oxygen flow dielectric film.First insulating film as NSG film and low oxygen flow insulating film as being SiN film.In addition, the second dielectric film is formed on low oxygen flow dielectric film.Second insulating film is as being bpsg film.Resistance to TDDB by utilizing the process of oxidizing atmosphere to improve vertical MOS transistor after forming dielectric film.In addition, because insulating barrier has low oxygen flow dielectric film, therefore, it is possible to suppress the fluctuation of the threshold voltage of vertical MOS transistor.
priorityDate 2011-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 53.