http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102687249-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102687249-B |
| titleOfInvention | For the smooth siconi etch of silicon-containing film |
| abstract | The present invention describes a kind of method of etching silicon-containing material, and the method comprises the SiConi compared to prior art with larger or less hydrogen fluorine velocity ration tM etching.Find to change the roughness that velocity ratio can reduce etching rear surface in this approach, and reduced the etch-rate difference of dense pattered region and sparse pattered region.Other means reducing etching rear surface roughness comprise the relatively high substrate temperature of the flowing of chopping precursor and/or plasma power, maintenance and perform SiConi in multiple stepsn tM .Above-mentioned each method separately or can merge use, for being reduced the roughness of etched surfaces by restriction solid residue grain size. |
| priorityDate | 2009-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.